IRF7737L2TRPBF

PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF Advanced Process Technology Optimized for Industrial Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability Lead Free, RoHS Compliant and Halogen Free D DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.5mΩ max. 1.9mΩ ID (Silicon Limited) 156A Qg 89nC S S S D S S S G Applicable DirectFET® Outline and Substrate Outline  L6 DirectFET® ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance impr...