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7MBP50JB060 Dataheets PDF



Part Number 7MBP50JB060
Manufacturers Fuji
Logo Fuji
Description IPM
Datasheet 7MBP50JB060 Datasheet7MBP50JB060 Datasheet (PDF)

New Intelligent Power Modules (R Series) Atsushi Yamaguchi Hiroaki Ichikawa 1. Introduction The equipment of power electronics application is comprised of general use inverters, numeric control (NC) machine tools, and industrial robots. Recently, the requirements of lower noise, higher efficiency, advanced functions, lower price, and downsizing for these items have been growing. The power devices used as the equipment of power electronics applications are progressing toward lower loss and highe.

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New Intelligent Power Modules (R Series) Atsushi Yamaguchi Hiroaki Ichikawa 1. Introduction The equipment of power electronics application is comprised of general use inverters, numeric control (NC) machine tools, and industrial robots. Recently, the requirements of lower noise, higher efficiency, advanced functions, lower price, and downsizing for these items have been growing. The power devices used as the equipment of power electronics applications are progressing toward lower loss and higher frequency, and the IGBT (insulated gate bipolar transistor) rather than the bipolar transistor is gaining popularity. On the other hand, together with lowered loss for the IGBT, intelligence is achieved by locating the peripheral circuits such as the driving circuit and various protective circuits inside the module. It then becomes possible to shorten the design time at the power circuit and contributes to downsizing and advanced equipment function. In keeping step with the trends of making the power devices intelligent, Fuji Electric announced the bipolar transistor type of intelligent power modules Table 1 The J-IPM and the N-IPM Series Type 6MBP15JB060 6MBP20JB060 6MBP100JA060 6MPB150JA060 J-IPM 6MBP200JA060 6MBP100JA120 7MBP50JB060 7MBP75JB060 7MBP50JA120 6MBP50NA060 6MPB75NA060 N-IPM 6MPB100NA060 7MBP50NA060 7MBP75NA060 7MBP100NA060 Inverter VCES (V) 600 600 600 600 600 1,200 600 600 1,200 600 600 600 600 600 600 IC (A) 15 20 100 150 200 100 50 75 50 50 75 100 50 75 100 PC (W) 40 50 240 450 600 600 150 195 240 198 320 400 198 320 400 (BJT-IPM) in 1989. In 1992, the J series of IGBT-IPM (J-IPM) that pursued lower loss was developed and in 1995 the N series of IGBT-IPM (N-IPM) aimed at lower price and lower noise was developed and produced. This time, the R series of IGBT-IPM (R-IPM) pursues higher cost performance, higher reliability and advanced functions. The line-up and features of Fuji Electric’s IGBTIPMs and the R-IPM are introduced in the following. 2. Fuji Electric’s Conventional IGBT-IPM Line-Up and Problems The line-up, performances and features of both the J-IPM and N-IPM are shown in Table 1. The J-IPM was developed with particular attention to low loss. The N-IPM realized low noise (soft switching) and low loss in order to respond to the market needs of EMC (electro magnetic compatibility) regulations and to match the CE mark. Furthermore, the N-IPM is an IPM with a lower price and higher reliability made possible by the adoption of new construction and new materials. The integrated functions are shown in Dynamic brake VCES (V) – – – – – – 600 600 1,200 – – – 600 600 600 IC (A) – – – – – – 30 30 15 – – – 30 50 50 PC (W) – – – – – – 80 80 80 – – – 120 198 198 Features Low loss High speed switching Low loss Soft switching High reliability New Intelligent Power Modules (R Series) 27 Free Datasheet http://www.Datasheet4U.com Table 2. The functions of the J-IPM and N-IPM are identical, and the protection functions against short circuit, overcurrent, drive power supply under-voltage and overheating are integrated. However, since both the J-IPM and the N-IPM are constructed of many types of electronics parts, there are of course some limits to downsizing and low price. To protect against overheating the temperature of the insulation substrate mounted with the IGBT chips was detected by thermistors. But it became problematic in applications where the current was concentrated into a few chips like motor lock mode, as shown in Fig. 1. Table 2 Protective functions of the IPM Function Overcurrent protection Short circuit protection Description Monitor collector current of every IGBT, and protect against overcurrent by cutting off the current Protects against short circuit current by cutting off the current by the same means as overcurrent protection When the current was concentrated to the chip which was located on the far side from the sensor on the substrate, the sensor could not follow the rapid temperature risings and could not protect it. In order to solve these problems and to realize higher performance as well as higher cost performance, the R-IPM was developed. 3. The R-IPM The line-up, characteristics and integrated functions are shown in Table 3 . The R-IPM has been applied the 3rd generation IGBT chip, which V CE (sat) is 2.3V typically, thereby achieving lower loss. Furthermore, they are comprised of the T j detecting overheat protection function in addition to the former IPM’s functions. Outlines, external view and internal equivalent circuit are shown in Figs. 2, 3 and 4 respectively. Because it is composed of a wide range including the ratings of 600V/50 to 300A and 1,200V/25 to 150A Fig.2 Package outline drawing of the R-series IPM 109 95 Detects drive power supply voltage, and Drive power supply protect in order to avoid destruction under-voltage caused by under-voltage in case of lowering protection of voltage Stores precise thermistor as temperature Overheat protection sensor and.


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