MG100Q2YS65H

MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) ― ― 2-95A4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 100 200 100 200 690 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque A W °C °C V N▪m 1 2002-10-04 Free Datasheet http://www.Datasheet4U.com MG100Q2YS65H Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon IF = 100 A, VGE = 0 IF = 100 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 100 A VGE = ±15 V, RG = 9.1 W Tc = 125°C Inductive load VCC = 600 V, IC = 100 A VG...