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IXTA80N10T Dataheets PDF



Part Number IXTA80N10T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA80N10T DatasheetIXTA80N10T Datasheet (PDF)

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ± 20 ± 30 80 220 2.

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ± 20 ± 30 80 220 25 400 230 10 -55 ... +175 175 -55 ... +175 V V V V A A A mJ W V/ns °C °C °C °C °C Nm/lb.in. g g G = Gate S = Source D (Tab) TO-220AB (IXTP) G DS D (Tab) D = Drain Tab = Drain Features z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ± 20V, VDS = 0V VDS = 105V, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 105 2.5 5.0 ± 200 5 150 V V nA μA μA Applications z z z VGS = 10V, ID = 25A, Note 1 & 2 14 mΩ z z z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve Train Systems © 2009 IXYS CORPORATION, All Rights Reserved DS99648A(11/09) Free Datasheet http://www.Datasheet4U.com IXTA80N10T IXTP80N10T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.50 VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 15Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 33 55 3040 420 90 31 54 40 48 60 21 15 0.65 S pF pF pF ns ns ns ns nC nC nC °C/W °C/W Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 1. Gate 2. Drain 3. Source TO-263 (IXTA) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 25A, VGS = 0V, Note 1 IF = 25A, -di/dt = 100A/μs VR = 50V, VGS = 0V 100 Characteristic Values Min. Typ. Max. 80 220 1.1 A A V ns TO-220 (IXTP) Outline Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-kole packages RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Free Datasheet http://www.Datasheet4U.com IXTA80N10T IXTP80N10T Fig. 1. Output Characteristics @ T J = 25ºC 80 70 60 VGS = 10V 9V 8V 280 VGS = 10V 240 200 Fig. 2. Extended Output Characteristics @ T J = 25ºC 9V ID - Amperes 50 40 30 20 6V 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 7V ID - Amperes 160 8V 120 80 40 0 0 2 4 6 8 6V 10 12 14 16 18 20 7V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC 80 70 60 VGS = 10V 9V 8V 2.8 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature 2.4 VGS = 10V R DS(on) - Normalized ID - Amperes 50 40 30 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 6V 7V 2.0 I D = 80A 1.6 I D = 40A 1.2 0.8 5V 0.4 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 4.6 4.2 3.8 VGS = 10V 15V - - - 90 80 TJ = 175ºC 70 Fig. 6. Drain Current vs. Case Temperature R DS(on) - Normalized 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0 25 50 75 100 125 150 175 200 225 250 TJ = 25ºC ID - Amperes 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved Free Datasheet http://www.Datasheet4U.com IXTA80N10T IXTP80N10T Fig. 7. Input Admittance 140 120 100 80 70 60 TJ = - 40ºC Fig. 8. Transconductance g f s - Siemens ID - Amperes 25.


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