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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
2SB764
TRANSISTOR (PNP)
1. EMITTER 2. COLLECTOR 3. BASE
FEATURES z General Purpose Switching Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -1 750 167 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE (sat) Cob fT Test conditions Min -60 -50 -5 -1 -1 60 30 -0.7 -1.2 20 150 V V pF MHz 320 Typ Max Unit V V V μA μA
IC=-10µA,IE=0 IC=-1mA,IB=0 IE=-10µA,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-50mA
CLASSIFICATION OF hFE(1)
RANK RANGE D 60-120 E 100-200 F 160-320
A,Dec ,2010
Free Datasheet http://www.Datasheet4U.com
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