2SD400

2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 0.900 1.100 8.400 8.800 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 25 5 1 0.9 150 -55-150 Units V V V A W ℃ ℃ 0.000 0.380 1.500 TYP 2.900 3.100 1.600 0.400 4.700 0.500 5.100 4.000 1.730 2.030 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Symbol Test conditions V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, IB=0 V(BR)EBO IE=10µA, IC=0 ICBO VCB=20V, IE=0 IEBO VEB=4V, IC=0 hFE(1) VCE=2V, IC=50mA hFE(2) VCE=2V, IC=1A VCE(sat) IC=500mA, IB=50mA VBE(sat) IC=500mA, IB=50mA fT VCE=10V, IC=50mA Cob VCB=10V, f=1MHz MIN TYP MAX UNIT 25 V 25 V 5V 1 µA 1 µA 60 560 30 0.3 V 1.2 V 180 MHz 15 pF CLASSIFICATION OF hFE(1) Rank D Range 60-120 E 100-200 F 160-320 G 280-560 Typical Characteristics 2SD400 TO-92MOD Transistor (NP...