Document
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N110R3
Datasheet IndustrialPowerControl
ResonantSwitchingSeries
IHW30N110R3
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •LowVCEsat •Easyparallelswitchingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
G
Applications: •Inductivecooking •Inverterizedmicrowaveovens •Resonantconverters •Softswitchingapplications
G C E
C E
KeyPerformanceandPackageParameters
Type
VCE IC VCEsat,Tvj=25°C
IHW30N110R3
1100V 30A
1.55V
Tvjmax 175°C
Marking H30R1103
Package PG-TO247-3
2 Rev.2.1,2015-01-26
ResonantSwitchingSeries
IHW30N110R3
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3 Rev.2.1,2015-01-26
IHW30N110R3
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C Pulsedcollectorcurrent,tplimitedbyTvjmax TurnoffsafeoperatingareaVCE≤1100V,Tvj≤175°C Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C Diodepulsedcurrent,tplimitedbyTvjmax
VCE IC ICpuls IF IFpuls
1100
60.0 30.0 90.0 90.0
60.0 30.0 90.0
V A A A A A
Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) PowerdissipationTC=25°C PowerdissipationTC=100°C Operating junction temperature Storage temperature
VGE
Ptot Tvj Tstg
±20 ±25
333.0 166.0
-40...+175
-55...+175
V
W °C °C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s
260 °C
Mounting torque, M3 screw Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter Characteristic
IGBT thermal resistance, junction - case
Diode thermal resistance, junction - case
Thermal resistance junction - ambient
Symbol Conditions
Rth(j-c) Rth(j-c) Rth(j-a)
Max.Value
Unit
0.45 K/W 0.45 K/W 40 K/W
4 Rev.2.1,2015-01-26
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current Transconductance Integrated gate resistor
IGES gfs rG
VGE=0V,IC=0.50mA VGE=15.0V,IC=30.0A Tvj=25°C Tvj=125°C Tvj=175°C VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C IC=0.70mA,VCE=VGE VCE=1100V,VGE=0V Tvj=25°C Tvj=175°C VCE=0V,VGE=20V VCE=20V,IC=30.0A
IHW30N110R3
min.
Value typ.
max. Unit
1100 -
-V
-
1.55 1.75 1.85 -
V
- 2.00 -
-
1.35 1.55 1.38 -
V
- 1.41 -
5.1 5.8 6.4 V
- - 5.0 µA - - 2500.0
- - 100 nA
- 15.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance Output capacitance Revers.