KV-24FV10

IRFHM8329PbF VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 6.1 8.8 13 24 nC A V V m   D 5 D 6 D 7 D 8 HEXFET® Power MOSFET Top View 4 G 3 S 2 S 1 S S S S   G D D D D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application  System/Load Switch  Synchronous MOSFET for Buck Converters Features Low Thermal Resistance to PCB (<3.8°C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM8329PbF   Package Type PQFN 3.3 mm x 3.3 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8329TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Stor...