KV-25FS100

IRFHM8342TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 16 25 5.0 20 nC A V m   D 5 D 6 D 7 D 8 Top View 4 G 3 S 2 S 1 S   PQFN 3.3 x 3.3 mm Applications  Control MOSFET for synchronous buck converter  Load Switch Features Low Charge (typical 5.2 nC) Low Thermal Resistance to PCB (<6.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Consumer Qualification Benefits Low Switching Losses Enable better Thermal Dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM8342PbF   Package Type PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8342TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. ± 20 10     Units V 28 18 20 112 2.6 20 0.020 -55 to + 150 W/°C °C W A Notes  through  are on page 8 ...