Document
IRFI3306GPbF
VDSS RDS(on) typ. max. ID
D
Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free
60V 3.3m 4.2m 71A
D
G
G
S
D
S
TO-220 Full-Pak D Drain S Source
G Gate
Base Part Number IRFI3306GPbF
Package Type TO-220 Full-Pak
Standard Pack Form Quantity Tube 50
Orderable Part Number IRFI3306GPbF
Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Thermally Limited) TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA
Max. 71 50 300 46 0.31 ± 20 311 -55 to + 175 300 10lbin (1.1Nm) Typ. ––– ––– Max. 3.23 65
Units A
W W/°C V mJ °C Units °C/W
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IRFI3306GPbF
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– ––– 0.068 ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 3.3 4.2 RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 ––– ––– 20 IDSS Drain-to-Source Leakage Current ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.72 ––– Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. gfs Forward Transconductance 89 ––– ––– Qg Total Gate Charge ––– 90 135 Qgs Gate-to-Source Charge ––– 22 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 26 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 116 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 30 ––– td(off) Turn-Off Delay Time ––– 45 ––– Fall Time ––– 33 ––– tf Ciss Input Capacitance ––– 4685 ––– Coss Output Capacitance ––– 506 ––– Crss Reverse Transfer Capacitance ––– 310 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 733 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 822 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Continuous Source Current ––– ––– 71 IS (Body Diode) Pulsed Source Current ––– ––– 300 ISM (Body Diode) VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery ––– 2.3 ––– ––– 43 ––– trr Reverse Recovery Time ––– 47 ––– ––– 63 ––– Qrr Reverse Recovery Charge ––– 78 ––– IRRM Reverse Recovery Current ––– 2.5 –––
Units V V/°C m V µA nA
Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5.0mA VGS = 10V, ID = 43A VDS = VGS, ID = 150µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
Units Conditions S VDS = 25V, ID = 43A ID = 43A nC VDS = 30V VGS = 10V ID = 43A, VDS =0V, VGS = 10V VDD = 39V ns ID = 43A RG = 2.7 VGS = 10V VGS = 0V VDS = 50V pF ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 48V VGS = 0V, VDS = 0V to 48V Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C, IS = 43A, VGS = 0V V/ns TJ = 25°C VR = 51V ns TJ = 125°C IF = 43A TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C
Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.34mH RG = 50, IAS = 43A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ approximately 90°C.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
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© 2013 International Rectifier
Submit Datasheet Feedback
October 7, 2013
Free Datasheet http://www.Datasheet4U.com
1000
TOP VGS 15V 12V 10V 8.0V 6.0V 5.5V 5.0V 4.8V
IRFI3306GPbF
1000
TOP VGS 15V 12V 10V 8.0V 6.0V 5.5V 5.0V 4.8V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100 4.8V
100
4.8V
60µs PULSE WIDTH
Tj = 25°C 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 10 0.1 1
60µs PULSE WIDTH
Tj = 175°C 10 100
V DS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig. 2 Typical Output Characteristics
2.5 ID = 43A VGS = 10V 2.0
ID, Drain-.