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KV-25FS100 Dataheets PDF



Part Number KV-25FS100
Manufacturers Sony
Logo Sony
Description COLOR TV SERVICE MANUAL
Datasheet KV-25FS100 DatasheetKV-25FS100 Datasheet (PDF)

  IRFI3306GPbF VDSS RDS(on) typ. max. ID   D Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free  Halogen-Free 60V 3.3m 4.2m 71A   D G G S D S TO-220 Full-Pak D Drain S Source G Gate Base Par.

  KV-25FS100   KV-25FS100


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  IRFI3306GPbF VDSS RDS(on) typ. max. ID   D Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free  Halogen-Free 60V 3.3m 4.2m 71A   D G G S D S TO-220 Full-Pak D Drain S Source G Gate Base Part Number IRFI3306GPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Part Number IRFI3306GPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy (Thermally Limited)  TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Junction-to-Ambient (PCB Mount)  RJA Max. 71 50 300 46 0.31 ± 20 311 -55 to + 175 300 10lbin (1.1Nm) Typ. ––– ––– Max. 3.23 65 Units A W W/°C V mJ   °C      Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 7, 2013 Free Datasheet http://www.Datasheet4U.com   IRFI3306GPbF Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– ––– 0.068 ––– V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 3.3 4.2 RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 ––– ––– 20 IDSS Drain-to-Source Leakage Current ––– ––– 250   IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100   RG(int) Internal Gate Resistance ––– 0.72 ––– Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)   Symbol Parameter Min. Typ. Max. gfs Forward Transconductance 89 ––– ––– Qg Total Gate Charge ––– 90 135 Qgs Gate-to-Source Charge ––– 22 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 26 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 116 ––– td(on) Turn-On Delay Time ––– 15 ––– tr Rise Time ––– 30 ––– td(off) Turn-Off Delay Time ––– 45 ––– Fall Time ––– 33 ––– tf Ciss Input Capacitance ––– 4685 ––– Coss Output Capacitance ––– 506 ––– Crss Reverse Transfer Capacitance ––– 310 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)  ––– 733 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 822 ––– Diode Characteristics   Symbol Parameter Min. Typ. Max. Continuous Source Current ––– ––– 71 IS (Body Diode) Pulsed Source Current ––– ––– 300 ISM (Body Diode)  VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery  ––– 2.3 ––– ––– 43 ––– trr   Reverse Recovery Time ––– 47 ––– ––– 63 ––– Qrr Reverse Recovery Charge ––– 78 ––– IRRM Reverse Recovery Current ––– 2.5 ––– Units V V/°C m V µA   nA    Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5.0mA VGS = 10V, ID = 43A  VDS = VGS, ID = 150µA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Units Conditions S VDS = 25V, ID = 43A ID = 43A   nC VDS = 30V VGS = 10V    ID = 43A, VDS =0V, VGS = 10V VDD = 39V ns ID = 43A   RG = 2.7 VGS = 10V    VGS = 0V VDS = 50V   pF ƒ = 1.0 MHz VGS = 0V, VDS = 0V to 48V    VGS = 0V, VDS = 0V to 48V    Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C, IS = 43A, VGS = 0V  V/ns TJ = 25°C VR = 51V ns TJ = 125°C IF = 43A TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.34mH RG = 50, IAS = 43A, VGS =10V. Part not recommended for use above this value.  Pulse width ≤ 400µs; duty cycle ≤ 2%.  Rθ is measured at TJ approximately 90°C.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 7, 2013 Free Datasheet http://www.Datasheet4U.com   1000 TOP VGS 15V 12V 10V 8.0V 6.0V 5.5V 5.0V 4.8V IRFI3306GPbF 1000 TOP VGS 15V 12V 10V 8.0V 6.0V 5.5V 5.0V 4.8V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM BOTTOM 100 4.8V 100 4.8V 60µs PULSE WIDTH Tj = 25°C 10 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 10 0.1 1 60µs PULSE WIDTH Tj = 175°C 10 100 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig. 2 Typical Output Characteristics 2.5 ID = 43A VGS = 10V 2.0 ID, Drain-.


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