ACS750LCA-050

IRFI7536GPbF HEXFET® Power MOSFET D Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.7m: 3.4m: 86A D G D S TO-220 Full-Pak G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Max. 86 73 820 75 0.5 ± 20 -55 to + 175 300 (1.6mm from case) 10lbf in (1.1N m) Units A W W/°C V °C ™ Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw x x Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Ù d Thermal Resistance Symbol RθJC RθJA ™ 738 See Fig. 14, 15, 22a, 22b mJ A mJ Junction-to-Case Junction-to-Ambient (PCB Mount) ij Parameter Typ. ––– ––– Max. 2.87 65 Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback Ocotber 16, 2013 Free Datasheet http://www.Datas...