MT29F128G08CXACA

SHENZHENG SIWANG ELECTRONICS TECHNOLOGY CO.,LTD. TO-92MOD Plastic-Encapsulate Transistors 2SC2235 FEATURES 1. EMITTER TRANSISTOR (NPN) TO-92MOD Power dissipation PCM: 900 mW (Tamb=25℃) Collector current 800 mA ICM: Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +15℃ 2. COLLECTER 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob unless otherwise specified) Test conditions MIN 120 120 5 0.1 0.1 80 240 1.0 1.0 120 30 V V MHz pF TYP MAX UNIT V V V µA µA Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA IC=500mA, VCE=5V VCE=5V, IC=100mA VCE=10V, IC=0 f=1MHz CLASSIFICATION OF hFE Rank Range O 80-160 Y 120-240 Free Datasheet http://www.Datasheet4U.com ...