NS-YB05C-B-V

2SA1505 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 500 50 150 125 -55 to+125 Unit V V V mA mA mW O O C C Page 1 of 2 7/15/2011 Free Datasheet http://www.Datasheet4U.com Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y at -VCE=6V, -IC=400mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -IC=100mA, - VCE=1V Gain Bandwidth Product at -VCE=6V, -IC=20mA Output Capacitance at -VCB=6V, f=1MHz COB 13 pF fT 200 MHz -VBE 0.8 1 V -VCE(sat) 0.1 0.25 V -IEBO 0.1 μA -ICBO 0.1 μA O Y hFE hFE hFE hFE 70 120 25 40 140 240 Symbol Min. Typ. Max. Unit Page 2 of 2 7/15/2011 Free Datasheet http://www.Datasheet4U.com ...