Document
CSD18501Q5A
www.ti.com SLPS319A – JUNE 2012 – REVISED JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18501Q5A
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FEATURES
Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5V VGS = 10V 1.8 3.3 2.5 UNIT V nC nC mΩ mΩ V
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ORDERING INFORMATION
APPLICATIONS
• • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control
Device CSD18501Q5A
Package SON 5-mm × 6-mm Plastic Package
Media 13-Inch Reel
Qty 2500
Ship Tape and Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, Single Pulse ID = 68A, L = 0.1mH, RG = 25Ω PD TJ, TSTG EAS VALUE 40 ±20 100 A 155 22 142 3.1 –55 to 150 231 A A W °C mJ UNIT V V
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View
S 1 8 D
S
2
7
D
S
3 D
6
D
G
4
5
D
P0093-01
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE
10 VGS - Gate-to-Source Voltage (V) ID = 25A VDS = 20V 8
20 RDS(on) - On-State Resistance - mΩ 18 16 14 12 10 8 6 4 2 0 0 2 4
RDS(on) vs VGS
TC = 25°C Id = 25A TC = 125ºC Id = 25A
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4
2
6 8 10 12 14 16 VGS - Gate-to- Source Voltage - V
18
20
G001
0
0
5
10
15 20 25 30 35 Qg - Gate Charge - nC (nC)
40
45
G001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments.
Copyright © 2012, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Free Datasheet http://www.Datasheet4U.com
CSD18501Q5A
SLPS319A – JUNE 2012 – REVISED JUNE 2012 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER Static Characteristics BVDSS IDSS IGSS VGS(th) RDS(on) gf.