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K4T51043QG Dataheets PDF



Part Number K4T51043QG
Manufacturers Samsung
Logo Samsung
Description 512Mb G-die DDR2 SDRAM
Datasheet K4T51043QG DatasheetK4T51043QG Datasheet (PDF)

CSD18501Q5A www.ti.com SLPS319A – JUNE 2012 – REVISED JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18501Q5A 1 FEATURES Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Thres.

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CSD18501Q5A www.ti.com SLPS319A – JUNE 2012 – REVISED JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18501Q5A 1 FEATURES Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5V VGS = 10V 1.8 3.3 2.5 UNIT V nC nC mΩ mΩ V • • • • • • • • 2 ORDERING INFORMATION APPLICATIONS • • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18501Q5A Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, Single Pulse ID = 68A, L = 0.1mH, RG = 25Ω PD TJ, TSTG EAS VALUE 40 ±20 100 A 155 22 142 3.1 –55 to 150 231 A A W °C mJ UNIT V V DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE 10 VGS - Gate-to-Source Voltage (V) ID = 25A VDS = 20V 8 20 RDS(on) - On-State Resistance - mΩ 18 16 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS TC = 25°C Id = 25A TC = 125ºC Id = 25A 6 4 2 6 8 10 12 14 16 VGS - Gate-to- Source Voltage - V 18 20 G001 0 0 5 10 15 20 25 30 35 Qg - Gate Charge - nC (nC) 40 45 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. Copyright © 2012, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Free Datasheet http://www.Datasheet4U.com CSD18501Q5A SLPS319A – JUNE 2012 – REVISED JUNE 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER Static Characteristics BVDSS IDSS IGSS VGS(th) RDS(on) gf.


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