512Mb G-die DDR2 SDRAM
CSD18503Q5A
www.ti.com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATUR...
Description
CSD18503Q5A
www.ti.com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 13 4.3 VGS = 4.5V VGS = 10V 1.8 4.7 3.4 UNIT V nC nC mΩ mΩ V
2
ORDERING INFORMATION
APPLICATIONS
DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control
Device CSD18503Q5A
Package SON 5-mm × 6-mm Plastic Package
Media 13-Inch Reel
Qty 2500
Ship Tape and Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 56A, L = 0.1mH, RG = 25Ω PD TJ, TSTG EAS VALUE 40 ±20 100 145 19 124 3.1 –55 to 150 157 A W °C mJ A UNIT V V
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View
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