2SA1980
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-150 mA, -50 V ...
2SA1980
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
-150 mA, -50 V
PNP Plastic Encapsulated
Transistor
FEATURES
Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) Complements of the 2SC5343
G H
TO-92
J
CLASSIFICATION OF hFE
Product-Rank Range 2SA1980-O 70~140 2SA1980-Y 120~240 2SA1980-G 200~400 2SA1980-L 300~700
K
1 Emitter 2 Collector 3 Base
D
A B
REF. A B C D E F G H J K
E
C
F
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
Collector
2 3Base 1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Rating
-50 -50 -5 -150 625 150, -55~150
Unit
V V V mA mW ° C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hFE VCE(sat) fT Cob NF
Min.
-50 -50 -5 70 80 -
Typ.
4 -
Max.
-0.1 -0.1 700 -0.30 7 10
Unit
V V V µA µA V MHz pF dB
T...
