INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5244
DESCRIPTION ·High breakdow...
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC5244
DESCRIPTION ·High breakdown voltage, and high reliability ·Wide area of safe operation (ASO) ·High-speed switching
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature
30
A
PC
200
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1
Free Datasheet http://www.Datasheet4U.com
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5244
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
800
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC=10A; IB=2.8A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=10A; IB=2.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
μA
hFE
DC Current Gain
IC= 10A; VCE= 5V
5
12
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
3
MHz
tstg
Storage Time IC= 12A, IB1=2.4A; IB2= -4.8A
1.5
2.5
μs
tf
Fall Time
0.12
0.2
μs
isc website：www.iscsemi....
