KLT1C6DC6

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G G D S G CEP SERIES TO-220 S CEB SERIES TO-263(DD-PAK) G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM e PD TJ,Tstg 1.3 0.8 5.2 41 0.33 -55 to 150 650 Units V V ±30 1.3 0.8 d 5.2 d 27 0.22 A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3 62.5 Limit 4.5 65 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2011.Oct http://www.cetsemi.com Free Datasheet http://www.Datasheet4U.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source ...