KLT1A12DC9

SPI (*1/*2/*4) NAND Flash GD5F1GQ4UAY SPI (Serial Peripheral Interface) NAND Flash Memory FEATURE ◆ 1G-bit Serial NAND Flash -128M-byte -2048 bytes page for read and program, spare 128bytes -128K bytes per block for erase ◆ Program/Erase/Read Speed -Page Program time: 300us typical -Block Erase time: 3.5ms typical -Page read time: 25us maximum(w/o ECC) -Page read time: 25+60us maximum(w/I ECC) ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# -Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD# -Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3 ◆ Low Power Consumption -60mA maximum active current -70uA typical standby current ◆ High Speed Clock Frequency -104MHz for fast read with 30PF load -Quad I/O Data transfer up to 320Mbits/s -2176/2048/64/16 wrap read option ◆ Enhanced access performance -2K bytes cache for fast random read -Cache read and cache program ◆ ◆ Assistant Block Management -Bad Block Protection -Bad Block Inhibit(BBI) Software/Hardware Write Protection -Write protect all/portion of memory via software -Enable/Disable protection with WP# Pin -Top or Bottom, Block selection combination ◆ Advanced Feature for NAND -Internal ECC option, per 512bytes ◆ Advanced security Features -16-Bit Customer ID -8K-Byte OTP Region -NOP (partial program) is 4 -Internal data move by page with ECC -Promised golden block0 ◆ Single Power Supply Voltage -Full voltage range:2.7~3.6V -Full voltage range:1.62~1.95V ◆ Minimum 100,000 Program/Erase Cycles ...