KLT1C12DC18

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION ·Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS ·Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.15 A PC Collector Power Dissipation @TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.Datasheet4U.com INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2954 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA hFE DC Current Gain IC= 50mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.0 4.0 GHz Cre 2 Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz IC= 50mA ; VCE= 10V;f= 500MHz RG= 50Ω IC= 30mA ; VCE= 10V;f= 500MHz RG= 50Ω 1.1 1.8 pF ︱S21e︱ Insertion Power Gain 10 12.5 dB NF Noise Figure 2.4 4.0 dB isc Website：www.iscsemi.cn 2 Free Datasheet http://www.Datasheet4U.com INCHANGE Semiconductor isc RF Product Specificat...