Production specification
Power Transistor
FEATURES
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements t...
Production specification
Power
Transistor
FEATURES
z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760.
2SB1184
Pb
Lead-free
APPLICATIONS
z z Epitaxial planar type.
PNP silicon
transistor.
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter Collector-Base Volage Value Units
VCBO
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-3
A
ICP
Collector Power Dissipation
-4.5
A
PC
Collector Power Dissipation
1
W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W007 Rev.A
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Production specification
Power
Transistor
2SB1184
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=-50uA,IE=0 IC=-1mA,IB=0 IE=-50uA,IC=0 VCB=-40V,IE=0 VEBO=-4V,IC=0 VCE=-3V,IC=-0.5A IC/IB=-2A /-0.2A IC/IB=-1.5A /-0.15A VCE=-5V,IE=-0.5A f=30MHz VCB=-10V,IE=0A,f=1MHz 70 50 82 MIN -60 -50 -5 -1 -1 390 -1 -1.2 V V MHz pF TYP MAX UNIT V V V uA uA
CLASSIFICATION
Rank Range
OF
P
hFE(1)
Q 120-270 R 180-390
...
