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MT29F4G16ABBEAH4 Dataheets PDF



Part Number MT29F4G16ABBEAH4
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F4G16ABBEAH4 DatasheetMT29F4G16ABBEAH4 Datasheet (PDF)

Micron Confidential and Proprietary 4Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABBEAH4, MT29F4G16ABBEAH4, MT29F4G16ABAEAH4 MT29F4G08ABAEAWP, MT29F4G16ABAEAWP, MT29F4G08ABAEAH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Page size x16: 2160 words (2048 + 112 words) – Block size: 64 pages (256K + 14K bytes) – Plane size: 2 planes x 1024 blocks per plane – Dev.

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Micron Confidential and Proprietary 4Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABBEAH4, MT29F4G16ABBEAH4, MT29F4G16ABAEAH4 MT29F4G08ABAEAWP, MT29F4G16ABAEAWP, MT29F4G08ABAEAH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Page size x16: 2160 words (2048 + 112 words) – Block size: 64 pages (256K + 14K bytes) – Plane size: 2 planes x 1024 blocks per plane – Device size: 4Gb: 2048 blocks • Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 30ns (1.8V) • Array performance – Read page: 25µs – Program page: 200µs (TYP) – Erase block: 2ms (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program page cache mode – Read page cache mode – One-time programmable (OTP) mode – Block lock (1.8V only) – Programmable drive strength – Two-plane commands – Multi-die (LUN) operations – Read unique ID – Internal data move • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion • WP# signal: Write protect entire device • First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. • RESET (FFh) required as first command after power-on • Alternate method of device initialization after power up (contact factory) • Internal data move operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G-compliant; see qualification report – Endurance: See Qualification Report • Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 48-pin TSOP type 1, CPL 2 – 63-ball VFBGA Notes: 1. The ONFI 1.0 specification is available at www.onfi.org. 2. CPL = Center parting line. PDF: 09005aef840a5fc9 m70m_4gb_nand.pdf – Rev. L 2/12 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. Free Datasheet http://www.Datasheet4U.com Micron Confidential and Proprietary 4Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 4G 08 Micron Technology Product Family 29F = NAND Flash memory A B A E A WP xx xx x ES :E Design Revision (shrink) Production Status Blank = Production ES = Engineering sample MS = Mechanical sample.


MT29F4G08ABBEAH4 MT29F4G16ABBEAH4 MT29F4G16ABAEAH4


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