Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to ...
Power
Transistors
2SD2250
Silicon
NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.3±0.2 5.0±0.3 3.0
Unit: mm
20.0±0.5
s Features
q q q
6.0
1.5
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
(TC=25˚C)
Ratings 160 140 5 12 7 90 3.5 150 –55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L Package
Internal Connection
C B
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 6mA IC = 6A, IB = 6mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 6A, IB1 = 6mA, IB2 = –6mA, VCC = 50V 20 2.5 5.0 2.5 140 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V
FE2
Rank classification
Q P
Rank hFE2
5000 to 15000 8000 to 30000
...
