2SD2250

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Complement to Type 2SB1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 3.5 W 90 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2250 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 6mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 ICEO Collector Cutoff Current VCE= 140V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0....