isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·Hig...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Complement to Type 2SB1490 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
12
A
3.5 W
90
150
℃
Tstg
Storage Temperature
-55~150
℃
2SD2250
isc website:www.iscsemi.com
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
ICEO
Collector Cutoff Current
VCE= 140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0....