Document
DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2SB548/ 2SD414 −80/80 2SB549/ 2SD415 −100/100 Unit V V V A A W W °C °C
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−100/120 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150
Electrode Connection
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* VCE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* IC = −500/500 mA, IB = −50/50 mA* VCE = −5.0/5.0 V, IC = −100/100 mA VCB = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0/2.0 −1.5/1.5 V V MHz pF MIN. TYP. MAX. −1.0/1.0 −1.0/1.0 Unit
µA µA
*
Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking hFE2 S 40 to 80 R 60 to 120 Q 100 to 200 P 160 to 320
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16141EJ2V0DS00 Date Published April 2002 N CP(K) Printed in Japan
©
2002 1998
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2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25°C)
Note
Total Power Dissipation PT (W)
Note 1. 1 mm aluminum board for heatsink 2. No insulating board 3. Silicon grease coating 4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
Derating dT (%)
Case Temperature Tc (°C)
Collector Current IC (A)
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Note 1. Tc = 25 °C 2. Derate the dissipation limited area by case temperature and duty cycle. 3. S/b limited area is a single pulse. Derate this area by case temperature.
Collector Current IC (A)
Note 1. Tc = 25 °C 2. Derate the dissipation limited area by case temperature and duty cycle. 3. S/b limited area is a single pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance ∆Rth (°C/W)
Collector Current IC (A)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
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Data Sheet D16141EJ2V0DS
Datasheet pdf - http://www.DataSheet4U.net/
Free Datasheet http://www.Datasheet4U.com
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2SB548, 549/2SD414, 415
• The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application exa.