P75N75

PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@30A=11mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Converters and Power Motor Controls Fully Characterized Avalanche Voltage and Current In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: TO-220AB Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 Marking : P75N75 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS +20 Continuous Drain Current ID 7 5 Pulsed Drain Current 1) ID M Maximum Power Dissipation TA =25OC TA =75OC PD Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e TJ,TS TG Avalanche Energy with Single Pulse IAS=47A, VDD=37.5V, L=0.3mH EAS Junction-to-Case Thermal Resistance RθJ C 350 105 62.5 -55 to +150 660 1.2 Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJ A 62 Note: 1. Maximum DC current limited by the package Uni ts V V A A W OC mJ OC/W OC/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.11.2007 PAGE . 1 PJP75N75 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Re s i s ta nc e Zero Gate Voltage Drain C urre nt Gate Body Leakage ...