2V7002W

2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 Features ESD Protected Low RDS(on) Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Symbol Value Drain−to−Source Voltage VDSS 60 Gate−to−Source Voltage Drain Current (Note 1) Steady State TA = 25°C TA = 85°C VGS ID ±20 310 220 Unit V V mA t<5s Power Dissipation (Note 1) Steady State t<5s TA = 25°C TA = 85°C PD 340 240 mW 280 330 Pulsed Drain Current (tp = 10 ms) Operating Junction and Storage Temperature Range IDM TJ, TSTG 1.4 −55 to +150 A °C Source Current (Body Diode) IS 250 mA Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Gate−Source ESD Rating (HBM, Method 3015) ESD 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Junction−to−Ambient − Steady State (Note 1) Symbol RqJA Max 450 Unit °C/W Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA ...