2N7002W

UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002WL-AL3-R 2N7002WG-AL3-R Package SOT-323 1 S Pin Assignment 2 3 G D Packing Tape Reel „ MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-537.b Free Datasheet http://www.Datasheet4U.com 2N7002W „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS ≤1MΩ) VDGR 60 V Continuous ±20 Gate Source Voltage VGSS V Non Repetitive(tP<50μs) ±40 Continuous 300 Drain Current ID mA Pulsed 800 Power Dissipation 200 mW PD Derated Above 25°C 1.6 mW/°C Junction Temperature TJ + 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL θ...