K6R4016C1D

PRELIMPreliminaryPPPPPPPPPINARY K6R4016C1D Document Title 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Package dimension modify on page 11. Change Icc, Isb and Isb1 Item ICC(Commercial) 10ns 12ns 15ns 10ns 12ns 15ns Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Draft Data September. 7. 2001 Septermber.28. 2001 November, 3, 2001 Remark Preliminary Preliminary Preliminary ICC(Industrial) ISB ISB1(Normal) Rev. 0.3 1. Correct AC parameters : Read & Write Cycle 2. Corrrect Power part : Delete "P-Industrial,Low Power" part 3. Delete Data Retention Characteristics 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns 1. Final datasheet release. 2. Delete 12ns speed bin. 1. Add the Lead Free Package type. November, 23, 2001 Preliminary Rev. 0.4 December, 18, 2001 Previous 85mA 75mA Current 75mA 65mA July, 09, 2002 Preliminary Rev. 1.0 Final Rev. 2.0 June. 20, 2003 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, ca...