HS817B

HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors Optocoupler with Transistor Output FEATURES C 4 E 3 Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak Creepage current resistance according to IEC 112, comparative tracking index: CTI  250 Thickness through insulation  0.4 mm Isolation materials according to UL 94 V-O Pollution degree 2 (resp. IEC 664) Climatic classification 55/100/21 (IEC 68 part 1) Low temperature coefficient of CTR G = leadform 10.16 mm; provides creepage distance > 8 mm, suffix letter “G” is not marked on the optocoupler Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17197_7 1 A 2 C 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no. E52744 cUL tested to CSA 22.2 bulletin 5A APPLICATIONS Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface ORDERING INFORMATION H S 8 PART NUMBER 1 7 x CTR BIN x PACKAGE OPTION CTR (%) 100 to 300 HS817 HS817G 130 to 260 HS817B HS817BG DIP-# DIP-#, 400 mil 7.62 mm 10.16 mm AGENCY CERTIFIED/PACKAG...