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HS817BG Dataheets PDF



Part Number HS817BG
Manufacturers Vishay
Logo Vishay
Description Optocoupler
Datasheet HS817BG DatasheetHS817BG Datasheet (PDF)

HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors Optocoupler with Transistor Output FEATURES C 4 E 3 • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250 • Thickness through insulati.

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HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors Optocoupler with Transistor Output FEATURES C 4 E 3 • Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak • Creepage current resistance according to IEC 112, comparative tracking index: CTI  250 • Thickness through insulation  0.4 mm • Isolation materials according to UL 94 V-O • Pollution degree 2 (resp. IEC 664) • Climatic classification 55/100/21 (IEC 68 part 1) • Low temperature coefficient of CTR • G = leadform 10.16 mm; provides creepage distance > 8 mm, suffix letter “G” is not marked on the optocoupler • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17197_7 1 A 2 C 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS • • • • BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no. E52744 cUL tested to CSA 22.2 bulletin 5A APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface ORDERING INFORMATION H S 8 PART NUMBER 1 7 x CTR BIN x PACKAGE OPTION CTR (%) 100 to 300 HS817 HS817G 130 to 260 HS817B HS817BG DIP-# DIP-#, 400 mil 7.62 mm 10.16 mm AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO DIP-4 DIP-4, 400 mil Notes • G = leadform 10.16 mm; G is not marked on the body. • For additional information on the available options refer to option information. Rev. 1.2, 27-Jul-11 1 For technical questions, contact: [email protected] Document Number: 83548 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Free Datasheet http://www.Datasheet4U.com HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors TEST CONDITION SYMBOL VR IF tp  10 μs Tamb  25 °C IFSM Pdiss Tj VCEO VECO IC tp/T = 0.5, tp  10 ms Tamb  25 °C ICM Pdiss Tj t=1s Tamb  25 °C VISO Ptot Tamb Tstg 2 mm from case, t  10 s Tsld VALUE 6 60 1.5 100 125 70 7 50 100 150 125 5 250 - 40 to + 100 - 55 to + 125 260 UNIT V mA A mW °C V V mA mA mW °C kV mW °C °C °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Forward current Forward surge current Power dissipation Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. Ptot - Total Power Dissipation (mW) 300 Coupled device 250 200 Phototransistor 150 100 50 0 0 40 80 120 IR-diode 96 11700 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 1.2, 27-Jul-11 2 For technical questions, contact: [email protected] Document Number: 83548 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Free Datasheet http://www.Datasheet4U.com HS817, HS817G, HS817B, HS817BG www.vishay.com Vishay Semiconductors TEST CONDITION IF = 50 mA VR = 0 V, f = 1 MHz IC = 1 mA IE = 100 μA VCE = 20 V, IF = 0 A IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100  f = 1 MHz SYMBOL VF Cj VCEO VECO ICEO VCEsat fc Ck 110 0.6 70 7 10 100 0.3 MIN. TYP. 1.43 50 MAX. 1.6 UNIT V pF V V nA V kHz pF ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Junction capacitance OUTPUT Collector emitter voltage Emitter collector voltage Collector emitter cut-off current COUPLER Collector emitter saturation voltage Cut-off frequency Coupling capacitance Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART NUMBER HS817 IC/IF VCE = 5 V, IF = 5 mA HS817G HS817B HS817BG SYMBOL CTR CTR CTR CTR MIN. 100 100 130 130 TYP. MAX. 300 300 260 260 % UNIT SAFETY AND INSU.


HS817B HS817BG SY6280


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