2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C)
S...
2SC5101
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5101 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
Unit
µA
23.0±0.3
V
9.5±0.2
µA
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.24typ tstg (µs) 4.32typ tf (µs) 0.40typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
A 0m
m 00
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
10 (V CE =4V)
10
m
A
IB
=4
30
00
2
150
mA
A
8 Collector Current I C (A)
100m
A
8 Collector Current I C (A)
75 m A
2
6
50 mA
6
4
20mA
1
Cas
(Case
2
25˚C
2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
˚C (
10mA
0
0
1
2
3
4
–30˚C...