D1581

DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. PACKAGE DRAWING (UNIT: mm) FEATURES Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 30 25 15 2.0 3.0 1.0 150 −55 to +150 Unit V V V A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Output capacitance Gain bandwidth product Symbol ICBO IEBO hFE1 hFE2 VBE VCE(sat) VBE(sat) Cob fT Conditions VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 VCE = 5.0 V, IC = 500 mA VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 300 mA IC = 1.0 A, IB = 10 mA IC = 1.0 A, IB = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE = −500 mA * * * * * 150 800 400 600 660 0.18 0.83 26 350 700 0.30 1.2 35 1500 MIN. TYP. MAX. 1...