39VF400A

2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories Data Sheet FEATURES: Organized as 128K x16 / 256K x16 / 512K x16 Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption – Active Current: 20 mA (typical) – Standby Current: 3 µA (typical) Sector-Erase Capability – Uniform 2 KWord sectors Block-Erase Capability – Uniform 32 KWord blocks Fast Read Access Time – 45 and 55 ns for SST39LF200A/400A – 55 ns for SST39LF800A – 70 and 90 ns for SST39VF200A/400A/800A Latched Address and Data Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts and command sets Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices a...