SUN RISE ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
1SS15A1 / 1SS15B1 / 1SS15C1 SCHOTTKY RECTIF...
SUN RISE ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diode
1SS15A1 / 1SS15B1 / 1SS15C1
SCHOTTKY RECTIFIER
Features
· · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance
SOD-123
2.70
1.6
Unit:mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @T L = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Power Dissipation (Note 1) Typical Thermal Resistance Junction to Ambient (Note 1) Operating and Storage Temperature Range Voltage Rate of Change Symbol VRRM VRWM VR VR(RMS) IO IFSM Pd RqJA Tj, TSTG dv/dt
1SS15A1
20 14
1SS15B1
30 21 1.0
20
1SS15C1
40 28
Unit V V A A mW °C/W °C V/ms
450 244 -65 to +125 1000
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Minimum Reverse Breakdown Voltage (Note 2) Symbo V(BR)R 1SS15A1 20 ¾ ¾ 0.300 0.385 0.500 1SS15B 1 1SS15C1 Unit ¾ 30 ¾ 0.375 0.430 0.525 ¾ ¾ 40 ¾ 0.480 0.550 V Test Conditions IR = 250mA IR = 130mA IR = 20mA IF = 0.1A, Tj = 25°C IF = 0.5A, Tj = 25°C IF = 1.0A, Tj = 25°C
Maximum Forward Voltage Drop (Note 2)
VFM
V
Maximum Leakage Current (Note 2)
100
150
200
uA
At rated DC blocking Voltage
IRM
Junction Capacitance Notes:
Cj
120
pF
f = 1MHz, VR = 0V DC
1. Valid provided that leads are kept at ambien...