Planar Transistor. B1560 Datasheet

B1560 Transistor. Datasheet pdf. Equivalent

B1560 Datasheet
Recommendation B1560 Datasheet
Part B1560
Description Silicon PNP Epitaxial Planar Transistor
Feature B1560; Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Comple.
Manufacture Sanken electric
Datasheet
Download B1560 Datasheet





Sanken electric B1560
Darlington
2SB1560
(70) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO
–160
V ICBO
VCB=–160V
–100max
µA
VCEO
–150
V IEBO
VEB=–5V
–100max
µA
VEBO
–5
V V(BR)CEO
IC=–30mA
–150min
V
IC
–10 A hFE
VCE=–4V, IC=–7A
5000min
IB
–1
A
VCE(sat)
IC=–7A, IB=–7mA
–2.5max
V
PC
100(Tc=25°C)
W
VBE(sat)
IC=–7A, IB=–7mA
–3.0max
V
Tj
150 °C fr
VCE=–12V, IE=2A
50typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
230typ
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2 ton tstg tf
(V)
() (A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05 +-00..12
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C– V CE Characteristics (Typical)
–10
–2
.5
mA
–2
.
0
m
A
–1.5mA
–8 –1.2mA
–1.0mA
–6 –0.8mA
–0.6mA
–4
IB=–0.4mA
–2
0
0 –2 –4 –6
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–10
–8
–2
–6
–10A
–7A
IC=–5A
–4
–1
–2
0
–0.2 –0.5 –1
–5 –10
Base Current IB(mA)
–50 –100 –200
0
0 –1 –2 –2.5
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40,000
(VCE=–4V)
10,000
5,000
Typ
h FE– I C Temperature Characteristics (Typical)
50000
(VCE=–4V)
125˚C
10000
5000
25˚C
–30˚C
θ j-a– t Characteristics
3
1
0.5
1,000
–0.2
–0.5
–1
Collector Current IC(A)
–5
1000
500
–10 –0.2
–0.5
–1
Collector Current IC(A)
–5
0.1
–10 1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
100
80
60 Typ
40
20
0
0.02 0.05 0.1
0.5 1
Emitter Current IE(A)
48
5 10
Safe Operating Area (Single Pulse)
–30
–10
100
1
ms
0ms
–5 DC
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–3
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
100
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150





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