STD100N03L-1

STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ MOSFET General features Type STD100N03L STD100N03L-1 ■ ■ ■ Package ID Pw VDSSS 30 V 30 V RDS(on) <0.0055 Ω 80 A(1) 110 W <0.0055 Ω 80 A(1) 110 W 3 1 1 3 2 100%AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) LOGIC LEVEL THRESHOLD DPAK IPAK Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters. Internal schematic diagram Applications ■ ■ HIGH CURRENT, HIGH SWITCHING DC-DC CONVERTER AUTOMOTIVE Order codes Sales Type STD100N03LT4 STD100N03L-1 Marking D100N03L D100N03L-1 Package DPAK IPAK Packaging TAPE & REEL TUBE September 2005 Rev 2 1/14 www.st.com 14 Free Datasheet http://www.Datasheet4U.com 1 Electrical ratings STD100N03L - STD100N03L-1 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-Source Voltage (VGS = 0) Gate-Source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Value 30 ± 20 80 70 320 110 0.73 3.9 -55 to 175 Unit V V A A A W W/°C V/ns °C Symbol VDS VG...