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MMBTJ177

Discrete POWER & Signal Technologies

(MMBTJ175 - MMBTJ177) P-Channel Switch

N J174 J175 J176 J177 G G S J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 Discrete POWER & Signal Technol...


Discrete POWER & Signal Technologies

MMBTJ177

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Description
N J174 J175 J176 J177 G G S J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 Discrete POWER & Signal Technologies MMBFJ175 MMBFJ176 MMBFJ177 D TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value - 30 30 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J174 - J177 350 2.8 125 357 Max *MMBFJ175 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Free Datasheet http://www.Datasheet4U.com J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Te...




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