isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC2954
DESCRIPTION ·Low Noise and High Gain
NF = 2.3 dB TYP. ; ︱...
isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2954
DESCRIPTION ·Low Noise and High Gain
NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for low noise wide band amplifier and buffer
amplifier of OSC, for VHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
35
V
VCEO Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.15
A
2
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
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isc Silicon
NPN RF
Transistor
INCHANGE Semiconductor
2SC2954
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IE= 0 ; VCB= 10V;f= 1.0MHz
IC= 50mA ; VCE= 10V;f= 500MHz RG= 50Ω
IC= 30mA ; VCE= 10V;f= 500MHz RG= 50Ω
MIN TYP. MAX UNIT
0.1 μA
30
200
3.0 4.0
GHz
1.1 1.8 pF
10 12.5
dB
2.4 4.0 dB
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...