FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
July 2005
FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
July 2005
FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V Low Gate Charge (typical 43 nC) Low Crss (typical 20pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability Fast Recovery Body Diode (typical 90ns)
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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TO-220
FQP Series
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Parameter
FQP11N50CF FQPF11N50CF
500 11 7 44 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns
11 * 7* 44 * 670 11 19.5 4.5
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum ...
