P11N50Z

NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 10.5 (Note 2) 6.7 (Note 2) 42 (Note 2) 36 ±30 190 4000 NDF11N50Z NDP11N50Z Unit V 10.5 6.7 42 145 A A A http://onsemi.com RDS(ON) (MAX) @ 4.5 A 0.52 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 500 N−Channel D (2) G (1) W V mJ V V NDF11N50ZG or NDP11N50ZG AYWW Gate TO−220 CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package Source TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM dv/dt IS TL TJ, Tstg 4.5 (Note 3) 10.5 260 − 55 to 150 V/ns A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device ...