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2SK3508-01MR Dataheets PDF



Part Number 2SK3508-01MR
Manufacturers Fuji
Logo Fuji
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3508-01MR Datasheet2SK3508-01MR Datasheet (PDF)

2SK3508-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-rep.

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2SK3508-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 650 ±8 ±32 ±30 8 250 20 5 2.16 50 +150 -55 to +150 Unit V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *6 2 kVrms < < *1 L=7.19mH, Vcc=65V *2 Tch < 150°C *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < = = = 150°C = *4 VDS < *6 t=60sec f=60Hz = 650V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=650V VGS=0V VDS=520V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS =75V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 Ω V CC =300V ID=8A VGS=10V L=7.19mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 650 3.0 Typ. Max. 5.0 25 250 100 0.88 Units V V µA nA Ω S pF 10 0.68 3.5 7 1200 1800 140 210 6 9 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 8 1.00 1.50 0.75 5.5 ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.50 58.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 Free Datasheet http://www.Datasheet4U.com 2SK3508-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 100 90 80 70 60 50 40 30 20 10 0 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=65V,I(AV)<=8A 300 250 200 EAV [mJ] 0 25 50 75 100 125 150 PD [W] 150 100 50 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 22 20 18 16 14 10 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID [A] 12 7.0V 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 2.


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