Document
2SK3508-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS ID ID(puls] VGS IAR *2 EAV *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 650 ±8 ±32 ±30 8 250 20 5 2.16 50 +150 -55 to +150 Unit V A A V A mJ kV/µs kV/µs W
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
°C °C *6 2 kVrms < < *1 L=7.19mH, Vcc=65V *2 Tch < 150°C *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < = = = 150°C = *4 VDS < *6 t=60sec f=60Hz = 650V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=650V VGS=0V VDS=520V VGS=0V VGS=±30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS =75V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 Ω V CC =300V ID=8A VGS=10V L=7.19mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C
Min.
650 3.0
Typ.
Max.
5.0 25 250 100 0.88
Units
V V µA nA Ω S pF
10 0.68 3.5 7 1200 1800 140 210 6 9 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 8 1.00 1.50 0.75 5.5
ns
nC
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
2.50 58.0
Units
°C/W °C/W
www.fujielectric.co.jp/denshi/scd
1
Free Datasheet http://www.Datasheet4U.com
2SK3508-01MR
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
100 90 80 70 60 50 40 30 20 10 0
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=65V,I(AV)<=8A
300
250
200
EAV [mJ]
0 25 50 75 100 125 150
PD [W]
150
100
50
0 0 25 50 75 100 125 150
Tc [°C]
starting Tch [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
22 20 18 16 14 10
20V 10V 8V 7.5V
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID [A]
12
7.0V
10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 2.