CSD1833

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1833 (9AW) TO220 MARKING : AS BELOW Low Freq. Power AMP. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current (DC) Pulse* Collector Power Dissipation Ta 25degC Tc=25 deg C Junction Temperature Storage Temperature Range *Single Pulse Pw=100ms SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 100 80 5 7 10 2 30 150 -55 to +150 UNIT V V V A A W W deg C deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=100V, IE=0 Collector Cut off Current ICEO VCE=80, IB=0 IEBO VBE=4V,IC=0 Emitter Cut off Current VCE(Sat)** IC=4A,IB=0,4A Collector Emitter Saturation Voltage VBE(Sat)** IC=4A,IB=0,4A Base Emitter Saturation Voltage hFE** IC=1A, VCE=5V DC Current Gain Dynamic Characteristics Transition Frequency ft Collector Output Capacitance Cob hFE CLASSIFICATION** MARKING **Pulse Test VCB=10V, IE=0 f=1MHz D : 60-120; E : 100-200, CSD 1833E VCE=5V,IC=50mA, f=5MHz MIN 80 100 5 60 TYP - MAX 10 1 10 1 1.5 320 UNIT V V V uA uA uA V V - 5 - MHz - 150 - pF F: 160-320 CSD 1833F CSD 1833D Continental Device India Limited Data Sheet Page 1 of 3 Free Datasheet http://www.Datasheet4U.com TO...