ST 2SA1505
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdiv...
ST 2SA1505
PNP Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications. The
transistor is subdivided into two groups, O and Y, according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg
Value 35 30 5 500 50 150 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain Current Gain Group at -VCE = 1 V, -IC = 100 mA
at -VCE = 6 V, -IC = 400 mA Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Voltage at -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA Output Capacitance at -VCB = 6 V, f = 1 MHz
Symbol O Y O Y hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE fT Cob
Min. 70 120 25 40 -
Typ. 0.1 0.8 200 13
Max. 140 240 0.1 0.1 0.25 1 -
Unit µA µA V V MHz pF
Dated : 12/12/2002
Free Datasheet http://www.Datasheet4U.com
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