DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK33...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3324
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3324 PACKAGE TO-3P
FEATURES
Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) Gate voltage rating : ±30 V Low on-state resistance : RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A) Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg
Note2 Note2
900 ±30 ±6 ±18 120 3.0 –55 to + 150 6.0 21.6
V V A A W W °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14203EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan
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