Document
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.375 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance
2 VTS40100CT
PIN 1 PIN 3 PIN 2 CASE
3 1 VF40100C
PIN 1 PIN 3 PIN 2
2
3
1
• Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS
TO-263AB K K
TO-262AA
2 1 1 VB40100C
PIN 1 PIN 2 K HEATSINK
2
3
For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum
VI40100C
PIN 1 PIN 3 PIN 2 K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A Tj max. 2 x 20 A 100 V 250 A 0.61 V 150 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG VTS40100CT VF40100C VB40100C 100 40 20 250 1500 - 40 to + 150 VI40100C UNIT V A A V °C
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 minute Operating junction and storage temperature range
Document Number: 88926 Revision: 02-Aug-07
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Free Datasheet http://www.Datasheet4U.com
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS at IF = 5 A IF = 10 A IF = 20 A at IF = 5 A IF = 10 A IF = 20 A at VR = 70 V Reverse current at rated VR per diode (2) at VR = 100 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C 0.375 0.445 0.605 13.7 8.4 IR 69.6 22.5 0.67 1000 45 µA mA µA mA SYMBOL TYP. 0.463 0.535 0.664 MAX. 0.73 V UNIT
Instantaneous forward voltage per diode (1)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RθJC VTS40100CT 2.0 VF40100C 4.0 VB40100C 2.0 VI40100C 2.0 UNIT °C/W
ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N VTS40100CT-E3/45 VF40100C-E3/45 VB40100C-E3/4W VB40100C-E3/8W VI40100C-E3/4W UNIT WEIGHT (g) 1.85 1.80 1.39 1.39 1.46 PACKAGE CODE 45 45 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50 VI40100C 18 16 D = 0.8
Average Forward Current (A)
Average Power Loss (W)
40
VB40100C VTS40100CT VF40100C
14 12 10 8 6 4 2 D = 0.3 D = 0.2 D = 0.1
D = 0.5
30
D = 1.0
20
T
10
D = tp/T
0 5 10 15 20
tp
25
0 0 25 50 75 100 125 150 175
0
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number: 88926 Revision: 02-Aug-07
Free Datasheet http://www.Datasheet4U.com
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
300
10000
Peak Forward Surge Current (A)
200 150 100
Junction Capacitance (pF)
250
1000
50
0 0 10 100
100 0.1 1 10 100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
100
Figure 6. Typical Junction Capacitance Per Diode
TA = 150 °C TA = 125 °C 10
Transient Thermal Impedance (°C/W)
10
Instantaneous Forward Current (A)
TA = 100 °C 1 TA = 25 °C
1
0.1 0 0.2 0.4 0.6 0.8 1
0.1 0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
Instantaneous Reverse Current (mA)
TA = 150 °C 10 TA = 125 °C TA = 100 °C 1
0.1 TA = 25 °C 0.01
0.001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
Document Number: 88926 Revision: 02-Aug-07
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Free Datasheet http://www.Datasheet4U.com
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) .