IRFHM8337TRPBF

IRFHM8337TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 17.9 5.4 18 nC A V m   D 5 D 6 D 7 D 8 Top View 4 G 3 S 2 S 1 S     PQFN 3.3 x 3.3 mm Applications  System/load switch,  Charge or discharge switch for battery protection Features Low Thermal Resistance to PCB (< 5.0°C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer Qualification Benefits Enable better Thermal Dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM8337PbF   Package Type PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8337TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA= 70°C IDM ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 12 9.4 94 35 22 18 2.8 25 0.02 -55 to + 150   Units V A  W W/°C °C Notes  thr...