Power MOSFET
IRFHM8337TRPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 ...
Description
IRFHM8337TRPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 30 12.4 17.9 5.4 18 nC A V m
D 5 D 6 D 7 D 8
Top View
4 G 3 S 2 S 1 S
PQFN 3.3 x 3.3 mm
Applications System/load switch, Charge or discharge switch for battery protection
Features Low Thermal Resistance to PCB (< 5.0°C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer Qualification
Benefits Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFHM8337PbF
Package Type PQFN 3.3mm x 3.3mm
Standard Pack Form Quantity Tape and Reel 4000
Orderable Part Number IRFHM8337TRPbF
Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA= 70°C IDM ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 12 9.4 94 35 22 18 2.8 25 0.02 -55 to + 150
Units V
A
W W/°C °C
Notes thr...
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