IRFHM8330PBF

IRFHM8330PbF VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 6.6 9.9 9.3 25 nC A V V m   D 5 D 6 D 7 D 8 HEXFET® Power MOSFET Top View 4 G 3 S 2 S 1 S S S S   G D D D D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application  System/Load Switch  Control MOSFET for synchronous buck converter Features Low Thermal Resistance to PCB (<3.8°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Consumer Qualification Benefits Enable better Thermal Dissipation Increased Power Density results in Multi-Vendor Compatibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM8330PbF   Package Type PQFN 3.3 mm x 3.3 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8330TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation  Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. ± 20 ...