Power MOSFET
IRFHM8342TRPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) ...
Description
IRFHM8342TRPbF
HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 16 25 5.0 20 nC A V m
D 5 D 6 D 7 D 8
Top View
4 G 3 S 2 S 1 S
PQFN 3.3 x 3.3 mm
Applications Control MOSFET for synchronous buck converter Load Switch
Features Low Charge (typical 5.2 nC) Low Thermal Resistance to PCB (<6.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Consumer Qualification
Benefits Low Switching Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFHM8342PbF
Package Type PQFN 3.3mm x 3.3mm
Standard Pack Form Quantity Tape and Reel 4000
Orderable Part Number IRFHM8342TRPbF
Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. ± 20 10
Units V
28 18 20 112 2.6 20 0.020 -55 to + 150 W/°C °C W A
Notes through are on page 8
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