IRFI4410ZGPBF

PD - 96372 IRFI4410ZGPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free VDSS RDS(on) typ. max. ID D 100V 7.9m: 9.3m: 43A D G G D S S TO-220AB Full-Pak D S G Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 43 30 170 47 0.3 ±30 310 -55 to + 175 300 10lb in (1.1N m) Typ. ––– ––– Max. 3.2 65 Units A c W W/°C V mJ °C d x x Thermal Resistance RθJC RθJA Junction-to-Case Junction-to-Ambient f Parameter f Units °C/W www.irf.com 1 05/18/11 Free Datasheet http://www.Datasheet4U.com IRFI4410ZGPbF Static @ T J = 25°C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/ T J RDS(on) VGS(th) IDSS IG SS RG(int) Param eter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain...